weitron hpp://www.weitron.com.tw 1/3 04-oct-2010 pnp plastic-encapsulate transistor to-92 KTA1266 weitron lead(pb)-free p b 1. emitter 2. collector 3. base features : ? excellent h fe linearity ?? low noise maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.15 a p c collector power dissipation 625 mw t j junction temperature 150 t stg st or age t emp erature -5 5-150 electrical characteristics (tamb=25 unles s otherwise sp ec ified) parameter symbol test co nditions min typ max unit coll ec tor-base b reakdown voltage v (br)cbo i c = -100a , i e =0 -50 v collector-emi tt er b reakdown voltage v (br)ceo i c = -1m a, i b =0 -5 0 v emi tte r-base breakdown voltage v (br) ebo i e = -100 a, i c =0 -5 collector cu t-o ff current i cbo v cb = -50v, i e =0 a emitter cut-off current i ebo v eb = -5v, i c =0 a h fe(1) v ce = -6v,i c = -2m a 70 h fe(2) 25 dc current gain v ce (s at) i c = -10 0ma,i b = -1 0 ma v transit io n fre qu ency f t v ce = -1 0v, i c = -1ma mhz classification of h fe(1) gr v o ra nge v ce = -6v,i c = -150m a collector-emi tt er satur ation voltage base-emitter satu ration v olta ge v be(sat) i c = -10 0ma,i b = -1 0 ma -1 .1 v c ollect or out pu t cap aci ta nce n oise f igu re c ob v cb = -10v,i e =0, f=1mhz nf v ce = -6v, i c = -0.1ma, f=1khz, rg=10k pf db rank 70 - 140 120 - 240 200 - 400 marking v -0 .1 -0 .1 400 -0 .3 80 7 10
weitron hpp://www.weitron.com.tw 2/3 typical characteristics KTA1266 04-oct-2010
weitron http://www.weitron.com.tw dim a b c d e g h j k l min 3.30 1.10 0.38 0.36 4.40 3.43 4.30 max to-92 to-92 outline dimensions unit:mm 3.70 1.40 0.55 0.51 4.70 - 4.70 2.64 14.50 1.270typ e c h a b d l j k g 2.44 14.10 KTA1266 04-oct-2010 3/3
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